型号 SI4562DY-T1-E3
厂商 Vishay Siliconix
描述 MOSFET N/P-CH 20V 8-SOIC
SI4562DY-T1-E3 PDF
代理商 SI4562DY-T1-E3
标准包装 2,500
系列 TrenchFET®
FET 型 N 和 P 沟道
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
开态Rds(最大)@ Id, Vgs @ 25° C 25 毫欧 @ 7.1A,4.5V
Id 时的 Vgs(th)(最大) 1.6V @ 250µA
闸电荷(Qg) @ Vgs 50nC @ 4.5V
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
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